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AlN/GaN/AlN heterostructures grown on Si substrate by plasma-assisted MBE for MSM UV photodetector applications

✍ Scribed by Mohd Yusoff, M.Z.; Mahyuddin, A.; Hassan, Z.; Abu Hassan, H.; Abdullah, M.J.; Rusop, M.; Mohammad, S.M.; Ahmed, Naser M.

Book ID: 122211744
Publisher: Elsevier Science
Year: 2015
Tongue: English
Weight: 937 KB
Volume: 29
Category: Article
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2014.03.041

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## Abstract The structural properties of 2 µm thick N‐face InN film, grown on Si (111) by plasma source molecular beam epitaxy after the initial deposition of 20 nm AlN and 40 nm GaN, were examined by transmission electron microscopy. The lattice mismatched GaN/AlN and InN/GaN interfaces limited th