AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD

✍ Scribed by Meunier, R.; Torres, A.; Morvan, E.; Charles, M.; Gaud, P.; Morancho, F.

• Book ID: 122809408
• Publisher: Elsevier Science
• Year: 2013
• Tongue: English
• Weight: 1000 KB
• Volume: 109
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2013.04.020