๐”– Bobbio Scriptorium
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Advances in SiC power MOSFET technology

โœ Scribed by Sima Dimitrijev; Philippe Jamet


Book ID
108361938
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
206 KB
Volume
43
Category
Article
ISSN
0026-2714

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๐Ÿ“œ SIMILAR VOLUMES


[Advanced Texts in Physics] Silicon Carb
โœ Choyke, W. J.; Matsunami, H.; Pensl, G. ๐Ÿ“‚ Article ๐Ÿ“… 2004 ๐Ÿ› Springer Berlin Heidelberg ๐ŸŒ English โš– 768 KB

Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the

Novel SiC accumulation-mode power MOSFET
โœ Liewih, H.; Dimitrijev, S.; Weitzel, C.E.; Harrison, H.B. ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› IEEE ๐ŸŒ English โš– 123 KB
Advances in SiC MOS Technology
โœ Cooper, Jr., J. A. ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 312 KB
Status and prospects for SiC power MOSFE
โœ Cooper, J.A., Jr.; Melloch, M.R.; Singh, R.; Agarwal, A.; Palmour, J.W. ๐Ÿ“‚ Article ๐Ÿ“… 2002 ๐Ÿ› IEEE ๐ŸŒ English โš– 546 KB
SiC microwave power technologies
โœ Clarke, R.C.; Palmour, J.W. ๐Ÿ“‚ Article ๐Ÿ“… 2002 ๐Ÿ› IEEE ๐ŸŒ English โš– 323 KB