[Advanced Texts in Physics] Silicon Carb
[Advanced Texts in Physics] Silicon Carbide || Power MOSFETs in 4H-SiC: Device Design and Technology
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Choyke, W. J.; Matsunami, H.; Pensl, G.
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Article
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2004
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Springer Berlin Heidelberg
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English
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Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the