Advances in Semiconductor Nanostructures. Growth, Characterization, Properties and Applications

✍ Scribed by Alexander V. Latyshev, Anatoliy V. Dvurechenskii and Alexander L. Aseev (Eds.)

• Publisher: Elsevier
• Year: 2016
• Tongue: English
• Leaves: 518
• Edition: 1st Edition
• Category: Library

✦ Synopsis

Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena.

The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research.

✦ Table of Contents

Content:
Front-matter,Copyright,List of Contributors,PrefaceEntitled to full textPart I: Low-Dimensional Systems: Theory and Experiment1 - The Theory of Two-Dimensional Electronic Systems*, Pages 3-28, A.V. Chaplik, M.V. Entin
2 - Two-Dimensional Semimetal in HgTe-Based Quantum Wells, Pages 29-48, Z.D. Kvon, E.B. Olshanetsky, D.A. Kozlov, N.N. Mikhailov, S.A. Dvoretsky
3 - Nonlinear Two-Dimensional Electron Conductivity at High Filling Factors, Pages 49-58, A.A. Bykov, S.A. Vitkalov
4 - Silicon-Based Nanoheterostructures With Quantum Dots, Pages 59-99, A.V. Dvurechenskii, A.I. Yakimov
5 - Electron Transport: From Nanostructures to Nanoelectromechanical Systems, Pages 101-129, A.G. Pogosov, M.V. Budantsev, A.A. Shevyrin, E.Yu. Zhdanov, D.A. Pokhabov
6 - Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures, Pages 131-155, O.A. Tkachenko, V.A. Tkachenko, Z.D. Kvon, D.V. Sheglov, A.L. Aseev
7 - Spectroscopy of Vibrational States in Low-Dimensional Semiconductor Systems, Pages 157-186, A.G. Milekhin, D.R.T. Zahn
8 - Atomic Processes on the Silicon Surface, Pages 189-221, A.V. Latyshev, L.I. Fedina, S.S. Kosolobov, S.V. Sitnikov, D.I. Rogilo, E.E. Rodyakina, D.A. Nasimov, D.V. Sheglov, A.L. Aseev
9 - Atomic Structure of Semiconductor Low-Dimensional Heterosystems, Pages 223-253, A.K. Gutakovskii, A.V. Latyshev, A.L. Aseev
10 - Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions, Pages 255-277, V.L. Alperovich, I.O. Akhundov, D.M. Kazantsev, N.S. Rudaya, E.E. Rodyakina, A.S. Kozhukhov, D.V. Sheglov, A.N. Karpov, N.L. Shwartz, A.S. Terekhov, A.V. Latyshev
11 - Atomic Processes in the Formation of Strained Ge Layers on Si(111) and (001) Substrates Within the Stransky–Krastanov Growth Mechanism, Pages 279-295, S.A. Teys
12 - Molecular Beam Epitaxy of CdxHg1−xTe, Pages 297-323, Yu.G. Sidorov, A.P. Anciferov, V.S. Varavin, S.A. Dvoretsky, N.N. Mikhailov, M.V. Yakushev, I.V. Sabinina, V.G. Remesnik, D.G. Ikusov, I.N. Uzhakov, G.Yu. Sidorov, V.D. Kuzmin, S.V. Rihlicky, V.A. Shvets, A.S. Mardezov, E.V. Spesivcev, A.K. Gutakovskii, A.V. Latyshev
13 - Surface Morphologies Obtained by Ge Deposition on Bare and Oxidized Silicon Surfaces at Different Temperatures, Pages 325-344, A.A. Shklyaev, K.N. Romanyuk, S.S. Kosolobov, A.V. Latyshev
14 - Monte Carlo Simulation of Semiconductor Nanostructure Growth, Pages 345-364, I.G. Neizvestny, N.L. Shwartz
15 - The Energy Pulse-Oriented Crystallization Phenomenon in Solids (Laser Annealing), Pages 367-381, A.V. Dvurechenskii
16 - Universality of the {113} Habit Plane in Si for Mixed Aggregation of Vacancies and Self-Interstitial Atoms Provided by Topological Bond Defect Formation, Pages 383-407, L.I. Fedina, A.K. Gutakovskii, A.V. Latyshev, A.L. Aseev
17 - Silicon-on-Insulator Structures Produced by Ion-Beam Synthesis and Hydrogen Transfer, Pages 409-433, I.E. Tyschenko, V.P. Popov
18 - Superminiature Radiation Sources Based on Semiconductor Nanostructures, Pages 437-461, V.A. Haisler, A.V. Haisler, I.A. Derebezov, A.S. Yaroshevich, A.K. Bakarov, D.V. Dmitriev, A.K. Kalagin, A.I. Toropov, M.M. Kachanova, Yu.A. Zhivodkov, T.A. Gavrilova, A.S. Medvedev, L.A. Nenasheva, O.I. Semenova, K.V. Grachev, V.K. Sandyrev, A.S. Kozhukhov, D.V. Sheglov, D.B. Tretyakov, I.I. Beterov, V.M. Entin, et al.
19 - Three-Dimensional Systems and Nanostructures: Technology, Physics and Applications, Pages 463-492, V.Ya. Prinz
20 - The Nature of Defects Responsible for Transport in a Hafnia-Based Resistive Random Access Memory Element, Pages 493-504, D.R. Islamov, T.V. Perevalov, V.A. Gritsenko, V.Sh. Aliev, A.A. Saraev, V.V. Kaichev, E.V. Ivanova, M.V. Zamoryanskaya, A. Chin
21 - The Optical Multiplexor Based on Multiple Coupled Waveguides in Silicon-on-Insulator Structures, Pages 505-519, A.V. Tsarev
Index, Pages 521-527

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