Advanced neural network model of plasma-driven integrated circuit process data
โ Scribed by Byungwhan Kim; Changki Min; Donghwan Kim
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 252 KB
- Volume
- 10
- Category
- Article
- ISSN
- 1369-8001
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Run-to-run control of a plasma etch process for 8 inch diameter silicon wafers at Digital Semiconductor is determined by maintenance of targeted values of post-etch metrology variables. The post-etch quality variables are extremely sensitive to variation in the etch chamber conditions due to fluctua
Optical emission spectroscopy (OES) data were used to construct neural network models of plasma etch process. According to a statistical experiment, actinomeric OES data were collected from the etching of oxide thin films in a CHF 3 -CF 4 magnetically enhanced reactive ion etching system. The etch r