Advanced electrothermal Spice modelling of large power IGBTs
โ Scribed by Azar, R.; Udrea, F.; Ng, W.T.; Dawson, F.; Findlay, W.; Waind, P.; Amaratunga, G.
- Book ID
- 114447988
- Publisher
- The Institution of Electrical Engineers
- Year
- 2004
- Tongue
- English
- Weight
- 466 KB
- Volume
- 151
- Category
- Article
- ISSN
- 1350-2409
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
## SUMMARY In this paper an electrothermal model of the power LED dedicated for SPICE is proposed. In this model electrical, thermal and optical properties of the considered device are taken into account. The description of the model and some results of the experimental verification of this model a
## Abstract In the paper a new electrothermal model of the optocoupler for SPICE is proposed. The model is based on electrical models of the LED and the bipolar phototransistor with their parameters dependent on temperature, their thermal models including both the selfโheating phenomenon and the mu
## Abstract This paper concerns the problem of modelling of power MOS transistors in SPICE. In the paper the new form of the electrothermal d.c. model (ETM) of the considered class of power devices is proposed. The ETM is based on the modified ShichmanโHodges model, in which the generation current,
## Abstract The paper concerns the problem of modelling of silicon and silicon carbide power Schottky diodes. The SPICE builtโin isothermal model of silicon diodes and the electrothermal model of silicon carbide Schottky diodes proposed by Infineon Technologies are investigated and modified. The qu