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Adsorption and dimer exchange processes in surfactant-mediated epitaxial growth of GaAs/InAs

✍ Scribed by R.H. Miwa; A.C. Ferraz; W.N. Rodrigues; H. Chacham


Book ID
117218692
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
360 KB
Volume
415
Category
Article
ISSN
0039-6028

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The structural and optical qualities of superlattice InAs-GaAs structures and quantum dots (QDs), grown by molecular beam epitaxy (MBE) at low (250 1C) and normal ($450 1C) growth temperatures, have been investigated. The InAs layers (3 monolayers) were grown under conditions where only the indium b