Adiabatic passage schemes in coupled semiconductor nanostructures

✍ Scribed by Ulrich Hohenester; Jaroslav Fabian; Filippo Troiani

• Book ID: 104073290
• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 505 KB
• Volume: 264
• Category: Article
• ISSN: 0030-4018
• DOI: 10.1016/j.optcom.2006.01.064

✦ Synopsis

Adiabatic passage schemes in coupled semiconductor quantum dots are discussed. For optical control, a doped double-dot molecule is proposed as a qubit realization. The quantum information is encoded in the carrier spin, and the flexibility of the molecular structure allows to map the spin degrees of freedom onto the orbital ones and vice versa, which opens the possibility for high-finesse quantum gates by means of stimulated Raman adiabatic passage. For tunnel-coupled dots, adiabatic passage of two correlated electrons in three coupled quantum dots is shown to provide a robust and controlled way of distilling, transporting and detecting spin entanglement, as well as of measuring the rate of spin disentanglement. Employing tunable interdot coupling the scheme creates, from an unentangled two-electron state, a superposition of spatially separated singlet and triplet states, which can be discriminated through a single measurement. Finally, we discuss phonon-assisted dephasing in quantum dots, and present control strategies to suppress such genuine solid-state decoherence losses.