Activation Energy of Point Defect Diffusion in Low-Temperature Deposited TiN
β Scribed by Elstner, F. ;Kupfer, H. ;Richter, F.
- Publisher
- John Wiley and Sons
- Year
- 1995
- Tongue
- English
- Weight
- 291 KB
- Volume
- 147
- Category
- Article
- ISSN
- 0031-8965
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## Abstract We present a systematic study of the influence of the growth temperature on the point defect landscape in metalβorganic chemical vapor deposition (MOCVD) InN. Stateβofβtheβart InN layers were grown at temperatures from 500 to 550βΒ°C and positron annihilation spectroscopy has been used t
High-purity iron was severely deformed at 77Β°K by rolling or drawing under liquid nitrogen. Changes in electrical resist.ivity were used to measure the recovery during isochronal and isothermal anneals in the temperature range llO-520Β°K. A sharp recovery stage was observed at 211Β°K for which t,he ac
LETTERS TO THE EDITOR 553 4. E. J. RAPPERPORT, Dejcwmation Processes of Zirconium, Sc.D. Thesis, M.I.T. (1955). 5. B. E. WARREN, private communication. This work was performed in 1956 as part of the requirements for the degree of Master of Science in Metallurgy at Massachusetts Institute of Technolo