Activated dissociation of oxygen on Cu(110)

✍ Scribed by Paul Pudney; Mike Bowker

• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 358 KB
• Volume: 171
• Category: Article
• ISSN: 0009-2614
• DOI: 10.1016/0009-2614(90)85380-u

✦ Synopsis

Oxygen adsorption on Cu( 110) has been studied using a thermal molecular-beam system. The sticking probability (S) is independent of substrate temperature above 220 K but depends strongly on beam temperature, showing the adsorption to be directly activated from the gas phase by 3 kJ mol-'. However, at low sub&ate temperatures there is also evidence of the involvement of an accommodated, molecularly chcmisorbed species in the dissociation process. The adsorption scales with total energy of the incoming molecule and so either the potential surface appears isotropic in space, or there,is a rather tortuous entrance channel to reach the barrier, which exists between unionised (physisorbed) oxygen and 01 at the surface.