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[ACM Press the 20th symposium - Providence, Rhode Island, USA (2010.05.16-2010.05.18)] Proceedings of the 20th symposium on Great lakes symposium on VLSI - GLSVLSI '10 - Semi-analytical model for schottky-barrier carbon nanotube and graphene nanoribbon transistors

โœ Scribed by Yang, Xuebei; Fiori, Gianluca; Iannaccone, Giuseppe; Mohanram, Kartik

Book ID
127020677
Publisher
ACM Press
Year
2010
Weight
667 KB
Category
Article
ISBN
145030012X

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๐Ÿ“œ SIMILAR VOLUMES

[ACM Press the 20th symposium - Providen
[ACM Press the 20th symposium - Providence, Rhode Island, USA (2010.05.16-2010.05.18)] Proceedings of the 20th symposium on Great lakes symposium on VLSI - GLSVLSI '10 - Semi-analytical model for schottky-barrier carbon nanotube and graphene nanoribbon transistors
โœ Yang, Xuebei; Fiori, Gianluca; Iannaccone, Giuseppe; Mohanram, Kartik ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› ACM Press โš– 667 KB

This paper describes a physics-based semi-analytical model for Schottky-barrier carbon nanotube (CNT) and graphene nanoribbon (GNR) transistors. The model includes the treatment of (i) both tunneling and thermionic currents, (ii) ambipolar conduction, i.e., both electron and hole current components,

[ACM Press the 20th symposium - Providen
[ACM Press the 20th symposium - Providence, Rhode Island, USA (2010.05.16-2010.05.18)] Proceedings of the 20th symposium on Great lakes symposium on VLSI - GLSVLSI '10 - Graphene tunneling FET and its applications in low-power circuit design
โœ Yang, Xuebei; Chauhan, Jyotsna; Guo, Jing; Mohanram, Kartik ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› ACM Press โš– 542 KB

Graphene nanoribbon tunneling FETs (GNR TFETs) are promising devices for post-CMOS low-power applications because of the low subthreshold swing, high I on/Ioff, and potential for large scale processing and fabrication. This paper combines atomistic quantum transport modeling with circuit simulation