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Accurate RF large-signal model of LDMOSFETs including self-heating effect

✍ Scribed by Youngoo Yang; Jaehyok Yi; Bumman Kim

Book ID
114554030
Publisher
IEEE
Year
2001
Tongue
English
Weight
125 KB
Volume
49
Category
Article
ISSN
0018-9480

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## Abstract The purpose of this study is to present an advanced technique for accurately modeling the behavior of a GaN HEMT under realistic working conditions. Since this semiconductor transistor technology has demonstrated to be very well suited for high‐frequency (HF) high‐power applications, an