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A large-signal SOI MOSFET model including dynamic self-heating based on small-signal model parameters

✍ Scribed by Caviglia, A.L.; Iliadis, A.A.


Book ID
114537681
Publisher
IEEE
Year
1999
Tongue
English
Weight
153 KB
Volume
46
Category
Article
ISSN
0018-9383

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An extraction technique to determine the small-signal HBT equi¨alent circuit is presented. Some of the extrinsic element ¨alues are extracted by using an analytical approach, while the remaining ones are calculated adopting a statistical method. All of the model elements are uniquely determined. Sat