Ga,O, thin films have been developed as advantageous base materials for sensors to detect reducing gases. Due to the large operating temperature range of the sensors, a temperature-programmed setting of the gas sensitivity is possible. CH, detection at 420 "C demonstrates the known problems with met
โฆ LIBER โฆ
Accumulation layer model for Ga2O3 thin-film gas sensors based on the Volkenstein theory of catalysis
โ Scribed by Helmut Geistlinger
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 631 KB
- Volume
- 18
- Category
- Article
- ISSN
- 0925-4005
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H, in air can be detected with sensors based on semiconductor oxides. A new technique for growing a hydrogen sensor based on SnO,(Bi,O,) thin films is presented here. The thin films have a thickness of 200-250 nm and the metals are in the atomic ratio Bi/Sn.= (3-S) at.%](97-95) at.%. The two metals