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Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy

✍ Scribed by M.A. Tischler; R.M. Potemski; T.F. Kuech; F. Cardone; M.S. Goorsky; G. Scilla


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
454 KB
Volume
107
Category
Article
ISSN
0022-0248

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In this study, the nature of the Mn electronic level in (In,Mn)As was investigated. (In,Mn)As thin films were epitaxially deposited on GaAs (0 0 1) substrates using metalorganic vapor phase epitaxy. Electronic transport properties were determined from Hall effect measurements over a temperature rang