a.c. Conduction originated from the atomic two-levels systems in hydrogenated amorphous silicon

Mechanism of the Initiation Step in Atom

Mechanism of the Initiation Step in Atomic Hydrogen-Induced CVD of Amorphous Hydrogenated Silicon–Carbon Films from Single-Source Precursors

✍ Aleksander M. Wróbel; Agnieszka Walkiewicz-Pietrzykowska 📂 Article 📅 1998 🏛 John Wiley and Sons 🌐 English ⚖ 387 KB 👁 1 views

A number of alkylsilanes and alkylcarbosilanes of widely different molecular structure are characterized in terms of their ability to form amorphous hydrogenated silicon-carbon (a-Si:C:H) films in atomic hydrogen-induced chemical vapor deposition (AHCVD). The compounds containing only Si-C and C-H b