𝔖 Bobbio Scriptorium

✦ LIBER ✦

Absorption and photoluminescent measurements in indirect, nitrogen doped GaAs1−χPχ

✍ Scribed by M. Gál; T. Görög; A. Keresztury

Publisher: Elsevier Science
Year: 1977
Tongue: English
Weight: 178 KB
Volume: 21
Category: Article
ISSN: 0038-1098
DOI: 10.1016/0038-1098(77)91382-5

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Stoichiometric effects in the growth of

Stoichiometric effects in the growth of doped epitaxial layers of GaAs1-χPχ

✍ C.E.E. Stewart 📂 Article 📅 1971 🏛 Elsevier Science 🌐 English ⚖ 912 KB

Exciton absorption, photoluminescence, a

Exciton absorption, photoluminescence, and band structure of N-free and N-doped In1−χGaχP: R.J. Nelson and N. Holonyak, Jr., Department of Electrical Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801, U.S.A.

📂 Article 📅 1976 🏛 Elsevier Science 🌐 English ⚖ 227 KB

Activation energies of the acceptor-boun

Activation energies of the acceptor-bound excitons and the donor-acceptor pairs in nitrogen-doped p-type ZnSe, p-type ZnSySe1−y, and p-type Zn1−xMgxSySe1−y epitaxial films grown on GaAs (1 0 0) substrates

✍ H.J. Kim; B.J. Kim; T.W. Kim; K.H. Yoo 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 544 KB