Exciton absorption, photoluminescence, and band structure of N-free and N-doped In1−χGaχP: R.J. Nelson and N. Holonyak, Jr., Department of Electrical Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801, U.S.A.

• Publisher: Elsevier Science
• Year: 1976
• Tongue: English
• Weight: 227 KB
• Volume: 18
• Category: Article
• ISSN: 0038-1098
• DOI: 10.1016/0038-1098(76)91524-6