𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Absence of localization in certain field-effect transistors

✍ Scribed by S. Washburn; K.P. Li; Dragana Popović; A.B. Fowler


Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
296 KB
Volume
23
Category
Article
ISSN
0749-6036

No coin nor oath required. For personal study only.

✦ Synopsis


We review some experimental and theoretical results on the metal-to-insulator transition (MIT) observed at zero magnetic field (B = 0) in several two-dimensional electron systems (2DES). Scaling of the conductance and magnetic-field dependence of the conductance provide convincing evidence that the MIT is driven by Coulomb interactions among the carriers and is dramatically sensitive to spin polarization of the carriers.


📜 SIMILAR VOLUMES


Localization and quantification of noise
✍ A. Luque Rodríguez; J. A. Jiménez Tejada; A. Godoy; J. A. López Villanueva; F. M 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 699 KB

## Abstract In this paper the effects of different noise sources in a four‐gate field‐effect‐transistor have been studied and quantified in different operation regimes of the structure. To carry out this study, a model that captures the main features of generation–recombination noise, produced by t

Theory of organic field effect transisto
✍ Rita Tecklenburg; Gernot Paasch; Susanne Scheinert 📂 Article 📅 1998 🏛 John Wiley and Sons 🌐 English ⚖ 176 KB 👁 2 views

Field effect transistors with an organic material as active layer are at present essentially used to determine the mobilities in these materials. Until now, in analysing the measured current characteristics, only the simplest (Shockley) model has been used which accounts neither for this type of thi