Absence of localization in certain field-effect transistors
✍ Scribed by S. Washburn; K.P. Li; Dragana Popović; A.B. Fowler
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 296 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0749-6036
No coin nor oath required. For personal study only.
✦ Synopsis
We review some experimental and theoretical results on the metal-to-insulator transition (MIT) observed at zero magnetic field (B = 0) in several two-dimensional electron systems (2DES). Scaling of the conductance and magnetic-field dependence of the conductance provide convincing evidence that the MIT is driven by Coulomb interactions among the carriers and is dramatically sensitive to spin polarization of the carriers.
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