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Ab initio study of point defects in NiTi-based alloys

✍ Scribed by Holec, David; Friák, Martin; Dlouhý, Antonín; Neugebauer, Jörg


Book ID
121878158
Publisher
The American Physical Society
Year
2014
Tongue
English
Weight
559 KB
Volume
89
Category
Article
ISSN
1098-0121

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We discuss the influence of band structures and point defects (oxygen vacancies and interstitials, and praseodymium vacancies) in Pr 2 O 3 , PrO 2 , and PrSiO 3.5 on the electrical properties of high-K gate dielectrics for the application in CMOS technology. In particular, we consider the origin of