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Ab initio study of oxygen point defects on tungsten trioxide surface

✍ Scribed by Caroline Lambert-Mauriat; Vincent Oison; Lama Saadi; Khalifa Aguir

Book ID
116896826
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
696 KB
Volume
606
Category
Article
ISSN
0039-6028

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We discuss the influence of band structures and point defects (oxygen vacancies and interstitials, and praseodymium vacancies) in Pr 2 O 3 , PrO 2 , and PrSiO 3.5 on the electrical properties of high-K gate dielectrics for the application in CMOS technology. In particular, we consider the origin of