Ab initio studies of the band parameters of III–V and II–VI zinc-blende semiconductors
✍ Scribed by S. Zh. Karazhanov; L. C. Lew Yan Voon
- Book ID
- 110141187
- Publisher
- Springer
- Year
- 2005
- Tongue
- English
- Weight
- 158 KB
- Volume
- 39
- Category
- Article
- ISSN
- 1063-7826
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
6 Energy-band Structure: Energy-band Gaps 6.1 Basic properties 103 6.1.1 Energy-band structure 103 6.1.2 Electronic density of states 111 6.2 E 0 -gap region 114 6.2.1 Effective -point hamiltonian 114 6.2.2 Room-temperature value 115 6.2.3 External perturbation effect 120 6.2.4 Doping effect 126 6.3
almost All The Semiconductors Of Practical Interest Are The Group-iv, Iii-v And Ii-vi Semiconductors And The Range Of Technical Applications Of Such Semiconductors Is Extremely Wide. the Purpose Of This Book Is Twofold: * to Discuss The Key Properties Of The Group-iv, Iii-v And Ii-vi Semiconductor