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Ab initio studies of single-height Si(001) steps

✍ Scribed by R. Bogusławski; Q.-M. Zhang; Z. Zhang; C. Roland; J. Bernholc


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
639 KB
Volume
30
Category
Article
ISSN
0921-5107

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Diffusion of a Si adatom over the reconstructed Si 100 surface with a single-height step on it is studied using the pseudopotential total energy method. The S rebonded step is B shown to act as a good sink for adatoms descending onto the lower ledge. This is due to the presence of deep traps on the