Surface phase diagram of recently proposed GaAs(0 0 1)-(2 Â 4)g is systematically investigated by using our ab initio-based approach. We focus on the (4 Â 7) domain consisting of c(4 Â 4)-like and (2 Â 4)-like regions to clarify surface dimer constituents as functions of temperature T and As (As 2 a
Ab initio-based approach to structural modulation on 4H-SiC(1 1 2¯ 0) during MBE growth
✍ Scribed by Tomonori Ito; Takumi Ito; Toru Akiyama; Kohji Nakamura
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 996 KB
- Volume
- 42
- Category
- Article
- ISSN
- 1386-9477
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