✦ LIBER ✦

Ab initio-based approach to adsorption–desorption behavior on the InAs(1 1 1)A heteroepitaxially grown on GaAs substrate

✍ Scribed by Tomonori Ito; Naoki Ishimure; Toru Akiyama; Kohji Nakamura

Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 568 KB
Volume: 318
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2010.10.012

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

An ab initio-based approach to adsorptio

An ab initio-based approach to adsorption–desorption behavior of Si adatoms on GaAs(1 1 1)A–(2 × 2) surfaces

✍ Hiroaki Tatematsu; Toru Akiyama; Kohji Nakamura; Tomonori Ito 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 429 KB

Heteroepitaxial growth of thin InAs laye

Heteroepitaxial growth of thin InAs layers on GaAs(1 0 0) misoriented substrates: A structural and morphological comparison

✍ H. Ben Naceur; I. Moussa; O. Tottereau; A. Rebey; B. El Jani 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 474 KB

Ab initio-based approach to structural m

Ab initio-based approach to structural modulation on 4H-SiC(1 1 2¯ 0) during MBE growth

✍ Tomonori Ito; Takumi Ito; Toru Akiyama; Kohji Nakamura 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 996 KB

Temperature dependence of the optical pr

Temperature dependence of the optical properties of InAs quantum dots with bimodal size evolution grown on GaAs (1 1 5)A substrate

✍ L. Bouzaïene; F. Saidi; L. Sfaxi; H. Maaref 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 271 KB

Ab initio-based approach to the reconstr

Ab initio-based approach to the reconstruction on InAs(111)A wetting layer grown on GaAs substrate

✍ Naoki Ishimure; Toru Akiyama; Kohji Nakamura; Tomonori Ito 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 676 KB

The surface reconstructions on InAs(111)A wetting layer grown on GaAs substrate are investigated by our ab initio-based approach incorporating the chemical potentials of In atom and As molecules in the vapor phase as functions of temperature and beam equivalent pressure. The calculated results imply

Ab initio-based approach to adsorption–desorption behavior on the InAs(1&#xa0;1&#xa0;1)A heteroepitaxially grown on GaAs substrate

Ab initio-based approach to adsorption–desorption behavior on the InAs(1 1 1)A heteroepitaxially grown on GaAs substrate