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A Wave Approach to Signal and Noise Modeling of Dual-Gate MESFET

✍ Scribed by Olivera R. Pronić; Vera V. Marković

Book ID
111732016
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
173 KB
Volume
56
Category
Article
ISSN
1434-8411

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A theoretical model of the dual-gate MESFET including electromagnetic propagation effects is presented. The quasistatic approach is induced by the presence of a constant volumic charge density in the depletion layer when the device operates under the slow-wave Schottky mode. Device features are anal