✦ LIBER ✦

Traveling-wave dual-gate MESFET: A multimode S-matrix derivation based on the quasistatic approach

✍ Scribed by Mohamed Taoufik Benhabiles; Abdelmadjid Benghalia; Saïda Lassoued; Meriem Berrabah

Publisher: John Wiley and Sons
Year: 1998
Tongue: English
Weight: 183 KB
Volume: 8
Category: Article
ISSN: 1096-4290
DOI: 10.1002/(sici)1099-047x(199801)8:1<11::aid-mmce3>3.0.co;2-j

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✦ Synopsis

A theoretical model of the dual-gate MESFET including electromagnetic propagation effects is presented. The quasistatic approach is induced by the presence of a constant volumic charge density in the depletion layer when the device operates under the slow-wave Schottky mode. Device features are analyzed, through its S-parameter variation vs. electrode length, frequency, loading impedances, and bias voltages. We found that the different propagating mode attenuation factors are determined principally by the conductor losses.