## Abstract The PME effect in an inhomogeneous semiconductor is calculated assuming uniform local mobilities. An experiment is described in which a gapβgradient is induced in a germanium crystal by means of a pressure gradient. The result is consistent with previously measured values of the pressur
β¦ LIBER β¦
A Warm Carrier Effect in Junctions and Graded Mixed Semiconductors
β Scribed by Leibler, L. ;Mycielski, J.
- Publisher
- John Wiley and Sons
- Year
- 1975
- Tongue
- English
- Weight
- 511 KB
- Volume
- 32
- Category
- Article
- ISSN
- 0031-8965
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