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A variational method for the description of the pressure-induced mixing in GaAs-based quantum wells

✍ Scribed by M.E. Mora-Ramos; S.Y. López; C.A. Duque

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
143 KB
Volume
40
Category
Article
ISSN
1386-9477

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✦ Synopsis

The mixing between G and X conduction band valleys in GaAs-Ga 1Àx Al x As quantum wells is investigated along the lines of a variational model. Trial wavefunctions are depending on a weighting variational parameter that accounts for the mixing by acting as a coefficient in the combination of both uncorrelated G and X states in the system. The dependencies of the calculated binding energy of a donor impurity and the correlated electron-hole photoluminescence peak energy upon hydrostatic pressure and quantum well width are presented.

📜 SIMILAR VOLUMES

Binding energy of a shallow donor in an
Binding energy of a shallow donor in an AlAs/GaAs quantum well and the Γ - X mixing
✍ Dag Wang 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 97 KB

The effects of mixing between the \(\Gamma\) and \(X\) valleys of the conduction band on the binding energy of a shallow donor in a thin type I AlAs/GaAs quantum well are investigated. The multivalley effective mass equations are solved variationally, with a separable hydrogen-like trial function. T