A unified approach to RF and microwave noise parameter modeling in bipolar transistors
โ Scribed by Niu, G.; Cressler, J.D.; Shiming Zhang; Ansley, W.E.; Webster, C.S.; Harame, D.L.
- Book ID
- 111678782
- Publisher
- IEEE
- Year
- 2001
- Tongue
- English
- Weight
- 145 KB
- Volume
- 48
- Category
- Article
- ISSN
- 0018-9383
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
## Abstract The advantages of heterojunction bipolar transistors (HBTs) make them very promising for modern RF communication systems and therefore their noise performance becomes an important issue as well. A procedure for HBT noise modeling based on the neural network approach is presented in this
## Abstract A method to extract the elements of the smallโsignal equivalent circuit and the noise parameters (NPs) of heterojunction bipolar transistors (HBTs) is presented. The extraction is done by simultaneous fitting of the measured __S__โparameters, noise figure (for a wellโmatched impedance),