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A Two-Mask Process for Fabrication of Bottom-Gate IGZO-Based TFTs

โœ Scribed by Hyun-Seok Uhm; Sang-Hyuk Lee; Won Kim; Jin-Seok Park


Book ID
114572655
Publisher
IEEE
Year
2012
Tongue
English
Weight
439 KB
Volume
33
Category
Article
ISSN
0741-3106

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This paper shows a simple approach to simulating the electron-beam lithography for sub-0.2 mm T-gate fabrication. Both the proximity parameters and the solubility rates of resists are experimentally determined. The simulation assumes that resists are removed at rates that are only governed by the lo