✦ LIBER ✦

A two-dimensional random growth model in layer-by-layer epitaxy

✍ Scribed by J.M. Pimbley; T.-M. Lu

Publisher: Elsevier Science
Year: 1984
Weight: 50 KB
Volume: 139
Category: Article
ISSN: 0167-2584
DOI: 10.1016/0167-2584(84)90458-4

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

A simple model for layered growth in sma

A simple model for layered growth in small epitaxial islands

✍ L.C.A. Stoop; J.H. Van der Merwe 📂 Article 📅 1973 🏛 Elsevier Science 🌐 English ⚖ 832 KB

Layer-by-layer quasi-epitaxial growth of

Layer-by-layer quasi-epitaxial growth of a crystalline organic thin film

✍ P. Fenter; P.E. Burrows; P. Eisenberger; S.R. Forrest 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 614 KB

Layer-by-layer growth of Bi2Sr2Can-1CunO

Layer-by-layer growth of Bi2Sr2Can-1CunOx films with n≥3 by molecular beam epitaxy

✍ A. Brazdeikis; A. Vailionis; A.S. Flodström 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 138 KB

Potential controlled electrosynthesis of

Potential controlled electrosynthesis of poly(thiophene-3-methanol): application of the two-dimensional layer-by-layer nucleation and growth model

✍ K. Kontturi; M. Pohjakallio; G. Sundholm; E. Vieil 📂 Article 📅 1995 🏛 Elsevier 🌐 English ⚖ 921 KB

The growth of a three dimensional layer

The growth of a three dimensional layer by diffusion

✍ M.F. Bell; J.A. Harrison 📂 Article 📅 1973 🏛 Elsevier Science ⚖ 135 KB

No model has appeared in the literature which describes the nucleation and growth of a three dimensional layer at constant potential under diffusion conditions. This is an important problem in metal deposition and the growth of anodic films. The transient ultimately contains information about the nu

Silicon-Based Heterostructures: Strained

Silicon-Based Heterostructures: Strained-Layer Growth by Molecular Beam Epitaxy

✍ M. A. Herman 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 183 KB 👁 1 views

The structural properties as well as epitaxial growth peculiarities of thin film silicon-based heterostructures (SBH) are described with emphasis put on MBE growth of these structures. More detailed considerations are presented for the strained-layer Si 1-x Ge x /Si heterostructures. The 4.17% latti