A two-dimensional numerical simulation of oxide charge buildup in MOS transistors due to radiation

✍ Scribed by Vasudevan, V.; Vasi, J.

• Book ID: 114535588
• Publisher: IEEE
• Year: 1994
• Tongue: English
• Weight: 732 KB
• Volume: 41
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.275224