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A transmission electron microscopy structural analysis of GaSe thin films grown on Si(111) substrates

✍ Scribed by A. Koëbel; Y. Zheng; J.F. Pétroff; M. Eddrief; Le Thanh Vinh; C. Sébenne

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
664 KB
Volume
154
Category
Article
ISSN
0022-0248

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## Abstract We have developed a technique for preparation of cross‐sectional transmission electron microscopy samples of reacted and unreacted Nb/al multilayer thin films on sapphire substrates. The choice of substrate was found to be extremely important. Sapphire sputters more slowly than Nb and N