A Pd/TiO 2 /Si MOS sensor (Pdtisin sensor) is proposed for the detection of hydrogen gas. The sensor is fabricated on a p-type /1 1 1S silicon wafer having resistivity of 3-6 O cm. The thickness of TiO 2 in this structure is about 600 nm. The capacitance-voltage (C-V) and conductance-voltage (G-V) c
A titanium dioxide-based MOS hydrogen sensor
β Scribed by Lallan Yadava; R. Dwivedi; S.K. Srivastava
- Publisher
- Elsevier Science
- Year
- 1990
- Tongue
- English
- Weight
- 500 KB
- Volume
- 33
- Category
- Article
- ISSN
- 0038-1101
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