๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

A theory of voltage breakdown of cylindrical P-N junctions, with applications

โœ Scribed by Armstrong, H.L.


Book ID
118696845
Publisher
Institute of Electrical and Electronics Engineers
Year
1957
Tongue
English
Weight
177 KB
Volume
4
Category
Article
ISSN
0096-2430

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๐Ÿ“œ SIMILAR VOLUMES


A planar p-n junction with near ideal br
โœ Sujata Jog; V.P. Sundar Singh ๐Ÿ“‚ Article ๐Ÿ“… 1988 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 279 KB

MOSFETs are increasingly used as power devices and an important requirement of such a device is its ability to withstand high voltage. Since many MOS transistors have planar configuration, it is essential that the actual breakdown voltage of a planar junction is made to reach the bulk breakdown volt