A complete extraction procedure able to determine MES-FET and HEMT nonlinear model parameters starting from standard dc and S-parameter measured data is presented. The procedure has been checked on different P-HEMTs, and a¨erage errors lower than 10% ha¨e been found for the static output characteris
A technique to extract extrinsic parameters of HEMTs
β Scribed by Man-Young Jeon
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 263 KB
- Volume
- 44
- Category
- Article
- ISSN
- 0895-2477
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β¦ Synopsis
Abstract
A practical technique for separating the drainβpad capacitance from the merged capacitance of drain pad, gateβtoβdrain, and drainβtoβsource of a pinchedβoff cold FET is presented. Moreover, unlike other methods requiring additional DC measurements, the presented technique allows us to extract extrinsic resistances using only RF measurements. Β© 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 44: 489β492, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20675
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