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A technique to extract extrinsic parameters of HEMTs

✍ Scribed by Man-Young Jeon


Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
263 KB
Volume
44
Category
Article
ISSN
0895-2477

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✦ Synopsis


Abstract

A practical technique for separating the drain‐pad capacitance from the merged capacitance of drain pad, gate‐to‐drain, and drain‐to‐source of a pinched‐off cold FET is presented. Moreover, unlike other methods requiring additional DC measurements, the presented technique allows us to extract extrinsic resistances using only RF measurements. Β© 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 44: 489–492, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20675


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