A super self-aligned selectively grown SiGe base (SSSB) bipolar transistor fabricated by cold-wall type UHV/CVD technology

✍ Scribed by Sato, F.; Tatsumi, T.; Hashimoto, T.; Tashiro, T.

• Book ID: 114535787
• Publisher: IEEE
• Year: 1994
• Tongue: English
• Weight: 688 KB
• Volume: 41
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.297732