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A study on the microstructure and electrical properties of CeO2 thin films for gate dielectric applications

โœ Scribed by Jung-Ho Yoo; Seok-Woo Nam; Sung-Kwan Kang; Yun-Ha Jeong; Dae-Hong Ko; Ja-Hum Ku; Hoo-Jeong Lee

Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
947 KB
Volume
56
Category
Article
ISSN
0167-9317

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โœฆ Synopsis

We investigated the evolution of microstructures and the electrical properties of CeO thin films deposited by the reactive 2 DC magnetron sputtering method on the (100) silicon substrate upon annealing in the O gas ambient. The CeO thin films 2 2 deposited at 3008C were polycrystalline. After annealing in ambient O gas, the crystallinity of the CeO film was improved 2 2 and becomes more dense with annealing time and temperature. The maximum accumulation capacitance of CeO thin film 2 annealed above 7008C in the ambient O gas decreased due to the growth of the interfacial SiO layer between CeO film 2 2 2

and silicon substrate by the diffusion of oxidizing species through CeO thin film from the ambient gas.

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