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A study on the law of oxidation rate in GaAs-based VCSELs

✍ Scribed by Feng, Y.; Liu, G.J.; Yan, C.L.; Hao, Y.Q.; Wang, Y.; Li, Z.J.; Lu, P.

Book ID
127024579
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
634 KB
Volume
125
Category
Article
ISSN
0030-4026

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## Abstract It has been proved that the dependence of the growth rate __V__ of a LPE GaAs layer on the relative supersaturation Οƒ of the solution at the interphase boundary can be determined on the basis of growth rate measurements of this layer in the case when crystallization is controlled by the