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Experimental study of temperature dependence of threshold characteristics in semiconductor VCSELs based on submonolayer InGaAs QDs

✍ Scribed by S. A. Blokhin; A. V. Sakharov; N. A. Maleev; A. G. Kuz’menkov; I. I. Novikov; N. Yu. Gordeev; Yu. M. Shernyakov; M. V. Maximov; V. M. Ustinov; A. R. Kovsh; S. Mikhrin; N. N. Ledentsov; G. Lee; J. Y. Chi

Book ID
111443639
Publisher
Springer
Year
2006
Tongue
English
Weight
185 KB
Volume
40
Category
Article
ISSN
1063-7826

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We investigate spectrally resolved continuous wave (CW) and spectrally and time-resolved switch-on emission properties of an InAs/InGaAs quantum-dot laser. The temperature and injection current dependence of the excited-state and ground-state emission dynamics is studied in the range between 20 °C a