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A study of the nature of dislocation loops in growth striations in silicon by X-Ray double crystal topography

✍ Scribed by Gabrielyan, K. T. ;Kuběna, J. ;Holý, V.

Publisher: John Wiley and Sons
Year: 1986
Tongue: English
Weight: 652 KB
Volume: 95
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.2210950227

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