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A study of the layer and junction properties of boron implantation in silicon : K. V. Anand, M. I. Sobhy and A. H. G. El-Dhaher. Int. J. Electronics40, (2) 169 (1976)

Publisher: Elsevier Science
Year: 1976
Tongue: English
Weight: 112 KB
Volume: 15
Category: Article
ISSN: 0026-2714
DOI: 10.1016/0026-2714(76)90752-6

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Distribution profiles of boron-implanted

Distribution profiles of boron-implanted layers in silicon using a high resolution anodic oxidation cell : K. V. Anand, A. H. G. El-Dhaher and M. I. Sobhy. Int. J. Electronics40 (6), 617 (1976)

📂 Article 📅 1976 🏛 Elsevier Science 🌐 English ⚖ 131 KB