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A study of the annealing of the 830 cm−1 IR band observed in electron-irradiated silicon

✍ Scribed by Lindsteöm, J. L. ;Oehrlejm, G. S. ;Corbett, J. W.


Publisher
John Wiley and Sons
Year
1986
Tongue
English
Weight
389 KB
Volume
95
Category
Article
ISSN
0031-8965

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Irradiation-induced 1.26 and 1.39 eV Emiwion Bands1) The effect of 2.2 MeV electron irradiation and subsequent annealings on the photoluminescence in zinc-doped p-type GaAs crystals is studied and analyzed. Rather strong emission bands peaked a t hv, (77 K ) near 1.26 eV (induced by electron irradi