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A study of rapid photothermal annealing on the electrical properties and reliability of tantalum pentoxide

✍ Scribed by Chen, Y.; Singh, R.; Rajan, K.; Dumin, D.J.; DeBoer, S.; Thakur, R.P.S.

Book ID
114537693
Publisher
IEEE
Year
1999
Tongue
English
Weight
63 KB
Volume
46
Category
Article
ISSN
0018-9383

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Effect of a silicon nitride buffer layer
Effect of a silicon nitride buffer layer on the electrical properties of tantalum pentoxide films
✍ B.Y. Wang; Hao Wang; C. Ye; Y. Wang; Y. Ye; W.F. Wang πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 495 KB

Ta 2 O 5 films with a buffer layer of silicon nitride of various thicknesses were deposited on Si substrate by reactive sputtering and submitted to annealing at 700 Β°C in nitrogen atmosphere. The microstructure and the electrical properties of thin films were studied. It was found that with a buffer