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A study of p-type dopants for InP grown by adduct MOVPE

✍ Scribed by A.W. Nelson; L.D. WestBrook


Book ID
107789651
Publisher
Elsevier Science
Year
1984
Tongue
English
Weight
742 KB
Volume
68
Category
Article
ISSN
0022-0248

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A Raman study of the strain in InP/GaAs
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A Raman investigation on InP layers grown by Metal Organic Vapour Phase Epitaxy on GaAs (001) substrates, with thicknesses exceeding the critical thickness and ranging from 23 to \(280 \mathrm{~nm}\), is reported. The InP LO phonon shows an increasing frequency blueshift with decreasing layer thickn