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A study of indium incorporation in In-rich InGaN grown by MOVPE

✍ Scribed by Y. Guo; X.L. Liu; H.P. Song; A.L. Yang; X.Q. Xu; G.L. Zheng; H.Y. Wei; S.Y. Yang; Q.S. Zhu; Z.G. Wang

Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
502 KB
Volume
256
Category
Article
ISSN
0169-4332

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A Raman study of the strain in InP/GaAs
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✍ S. Gennari; P.P. Lottici; F. RiccΓ² πŸ“‚ Article πŸ“… 1995 πŸ› Elsevier Science 🌐 English βš– 145 KB

A Raman investigation on InP layers grown by Metal Organic Vapour Phase Epitaxy on GaAs (001) substrates, with thicknesses exceeding the critical thickness and ranging from 23 to \(280 \mathrm{~nm}\), is reported. The InP LO phonon shows an increasing frequency blueshift with decreasing layer thickn