Low-angle boundaries in silicon crystals
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A. M. Eidenson; Doz. Dr. M. Ya. Dashevsky
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Article
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1975
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John Wiley and Sons
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English
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## Abstract The main types of lowβangle boundaries (LAB) in single crystals with diamondβtype lattice are determined. The scheme of dislocation alignments formation in thermal stress field of growing crystal which allows to derive types of possible LAB and their distribution in crystal is proposed.