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A study of expected EOS/ESD sensitivity of III–V compound semiconductor devices

✍ Scribed by E.W. Chase


Publisher
Elsevier Science
Year
1990
Tongue
French
Weight
677 KB
Volume
24
Category
Article
ISSN
0304-3886

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The optical properties of amorphous group III-V compound semiconductors were investigated through the first principles calculations. The imaginary parts (ε 2 ) of dielectric function for amorphous GaAs, InAs, and InSb are given, respectively. There is a single broad peak found in the ε 2 spectrum. B