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Ellipsometric study of metal-organic chemically vapor deposited III–V semiconductor structures

✍ Scribed by Samuel A. Alterovitz; Patricia A. Sekula-Moise; Robert M. Sieg; Mark N. Drotos; Nancy A. Bogner

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
563 KB
Volume
220
Category
Article
ISSN
0040-6090

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Electroluminescence (EL) measurements of nitride-rich GaN 1--x P x single quantum well (SQW) structures, grown using laser-assisted metalorganic chemical vapor deposition (LA-MOCVD), were performed. The maximum red shift of GaN 1--x P x to the GaN was 50 meV from the result of photoluminescence (PL)